Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023)
نویسندگان
چکیده
CuI-Based Nonvolatile Memory In article number 2211022, Sung Hun Jin, and co-workers explore the light mediated resistive switching of CuI based, random-access memory device in terms enhancement scheme for reliability, current conduction mechanism via low temperature study. This potentially opens a new paradigm nonvolatile technologies with high density multibit data storage.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2023
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202370041